RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp......
Shenzhen Koben Electronics Co., Ltd.
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SI4010-C2-GSR RF Power Transistor - High Performance And Reliable Power Solution
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SI4010-C2-GSR RF Power Transistors Product Description: The SI4010-C2-GSR is a high-performance RF power transistor specifically designed for use in narrow band, high power applications such as cellular, PCS, and 3G infrastructure. The device is ......
Shenzhen Sai Collie Technology Co., Ltd.
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High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included
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...Overview This is a PNP Silicon Transistor, specifically a Darlington transistor with an integrated damping diode. It is designed for high-gain circuits and offers a high collector current capability. Key specifications include a collector-emitter voltage......
Hefei Purple Horn E-Commerce Co., Ltd.
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ......
Anterwell Technology Ltd.
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STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
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...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si......
Shenzhen Retechip Electronics Co., Ltd
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WSF28N06 Field Effect Transistor IC Chip N Channel MOSFET Metal Oxide
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... voltage rating of 60 volts and current rating of 28 amperes. It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C...
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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Transistors IXBX50N360HV Single IGBTs Transistors TO-247-3 Integrated Circuit Chip
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... MOS Transistor. Specification Of IXBX50N360HV Part Number IXBX50N360HV Voltage - Collector Emitter Breakdown (Max) 3600 V Current - Collector (Ic) (Max) 125 A Current - ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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SMD diode, MOS transistor and other transistor
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...transistors is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage regulation, and signal modulation.Pingshang Technology´s main SMD transistor series, the main categories are: SMD diodes, SMD transistors, field effect transistors and MOS transistors.Free samples, provided for life!The transistor specifications......
Dongguan Pingshang Electronic Technology Co., Ltd.
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BFT92 Bipolar Transistors - BJT Chips Diode Transistor Integrated Circuits
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...of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers. For more information on BFT92 detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to...
Hong Kong Jia Li Xin Technology Limited
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Integrated Circuit Chip EMD3T2R-----General purpose (dual digital transistors)
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...transistors) Specifications: Datasheets EMD3, UMD3N, IMD3A Product Photos EMT6_EMT6 PKg Catalog Drawings EMT-6 Package Top Standard Package 8,000 Category Discrete Semiconductor Products Family Transistors (BJT) - Arrays, Pre-Biased Series - Packaging Tape & Reel (TR) Transistor......
Mega Source Elec.Limited
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